BSO4822
器件描述：OptiMOS Small-Signal-Transistor
器件厂商：INFINEON [Infineon Technologies AG]
文件大小：100.22KB，共8页
Sponsor by e络盟器件资料摘要：
2002-01-28Page 1
Preliminary data
BSO4822
OptiMOS
Ge2
Small-Signal-Transistor
Product Summary
V
DS
30 V
R
DS(on)
10 mΩ
I
D
12.7 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R
DS(on)
product (FOM)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications
Type Package Ordering Code
BSO4822 SO 8 Q67042-S4095
Marking
4822
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
12.7
10.2
A
Pulsed drain current
T
A
=25°C
I
D puls
51
Avalanche energy, single pulse
I
D
=12.7 A , V
DD
=25V, R
GS
=25Ω
E
AS
165 mJ
Reverse diode dv/dt
I
S
=12.7A, V
DS
=24V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
2.5 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Preliminary data
BSO4822
OptiMOS
Ge2
Small-Signal-Transistor
Product Summary
V
DS
30 V
R
DS(on)
10 mΩ
I
D
12.7 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R
DS(on)
product (FOM)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications
Type Package Ordering Code
BSO4822 SO 8 Q67042-S4095
Marking
4822
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
12.7
10.2
A
Pulsed drain current
T
A
=25°C
I
D puls
51
Avalanche energy, single pulse
I
D
=12.7 A , V
DD
=25V, R
GS
=25Ω
E
AS
165 mJ
Reverse diode dv/dt
I
S
=12.7A, V
DS
=24V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
2.5 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56