1999-11-22
Page 1
Preliminary data
BSO613SPV
SIPMOS

Small-Signal-Transistor
Features
c183 P-Channel
c183 Enhancement mode
c183 Avalanche rated
c183 dv/dt rated
Product Summary
Drain source voltage V
DS
-60 V
Drain-source on-state resistance 0.13
c87
R
DS(on)
Continuous drain current AI
D
-3.44
SIS00062
G
45
D
S
36
D
S
27
D
S
18
Top View
D
Type Package Ordering Code
BSO613SPV SO 8 Q67042-S4021
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
= 25 °C
I
D
-3.44 A
Pulsed drain current
T
A
= 25 °C
I
D puls
-13.8
Avalanche energy, single pulse
I
D
= -3.44 A , V
DD
= -25 V, R
GS
= 25 c87
E
AS
150 mJ
0.25E
AR
Avalanche energy, periodic limited by T
jmax
Reverse diode dv/dt
I
S
= -3.44 A, V
DS
= -48 V, di/dt = 200 A/µs,
T
jmax
= 150 °C
dv/dt 6 kV/µs
Gate source voltage V
GS
±20 V
Power dissipation
T
A
= 25 °C
P
tot
2.5 W
Operating and storage temperature T
j
, T
stg
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56