BSO350N03
OptiMOS
®
2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Dual n-channel
• Logic level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• Avalanche rated
• dv/dt rated
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
10 secs steady state
Continuous drain current I
D T
A
=25 °C
2)
65A
T
A
=70 °C
2)
4.8 4
Pulsed drain current I
D,pulse T
A
=25 °C
3)
Avalanche energy, single pulse E
AS
I
D
=6 A, R
GS
=25 Ω mJ
Reverse diode dv/dt dv/dt
I
D
=6 A, V
DS
=20 V,
di/dt=200 A/µs,
T
j,max
=150 °C
kV/µs
Gate source voltage V
GS
V
Power dissipation P
tot T
A
=25 °C
2)
2.0 1.4 W
Operating and storage temperature T
j
, T
stg
°C
IEC climatic category; DIN IEC 68-1
• Qualified according to JEDEC
1
for target applications
Value
55/150/56
-55 ... 150
±20
6
8
24
V
DS
30 V
R
DS(on),max
35 mΩ
I
D
6 A
Product Summary
Type Package Ordering Code Marking
BSO350N03 P-DSO-8 Q67042-S4217 350N3
P-DSO-8
Rev. 1.11 page 1 2004-02-09