2002-01-08Page 1
Preliminary data
BSO303SP
OptiMOS

-P Small-Signal-Transistor
Product Summary
V
DS
-30 V
R
DS(on)
21 mΩ
I
D
-8.9 A
Feature
• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
SIS00062
G
45
D
S
36
D
S
27
D
S
18
Top View
D
Type Package Ordering Code
BSO303SP SO 8 Q67042-S4129
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D

-8.9
-7.1
A
Pulsed drain current
T
A
=25°C
I
D puls
-35.6
Avalanche energy, single pulse
I
D
=-8.9 A , V
DD
=-25V, R
GS
=25Ω
E
AS
97 mJ
Reverse diode dv/dt
I
S
=-8.9A, V
DS
=-24V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
-6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
2.35 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56