Semiconductor Group 1 Jul-16-1996
BSM 75 GB 170 DN2
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R
G on,min
= 22 Ohm
Type V
CE
I
C
Package Ordering Code
BSM 75 GB 170 DN2 1700V 110A HALF-BRIDGE 1 C67070-A2702-A67
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
1700 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1700
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 80 °C
I
C
75
110
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
I
Cpuls
150
220
Power dissipation per IGBT
T
C
= 25 °C
P
tot
625
W
Chip temperature T
j
+ 150 °C
Storage temperature T
stg
-55 ... + 150
Thermal resistance, chip case R
thJC
≤ 0.2 K/W
Diode thermal resistance, chip case R
thJCD
≤ 0.63
Insulation test voltage, t = 1min. V
is
4000 Vac
Creepage distance - 16 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56