Semiconductor Group 1 Mar-29-1996
BSM300GA120DN2E3166
IGBT Power Module
Preliminary data
• Single switch
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
Type V
CE
I
C
Package Ordering Code
BSM300GA120DN2E3166 1200V 430A SINGLE SWITCH 1 C67070-A2007-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
1200 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1200
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 80 °C
I
C
300
430
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
I
Cpuls
600
860
Power dissipation per IGBT
T
C
= 25 °C
P
tot
2500
W
Chip temperature T
j
+ 150 °C
Storage temperature T
stg
-55 ... + 150
Thermal resistance, chip case R
thJC
≤ 0.05 K/W
Diode thermal resistance, chip case R
thJCD
≤ 0.065
Insulation test voltage, t = 1min. V
is
2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56