Semiconductor Group 1 Jan-10-1997
BSM50GD60DN2E3226
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal
Type V
CE
I
C
Package Ordering Code
BSM50GD60DN2E3226 600V 50A ECONOPACK 2 C67070-A2515-A67
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
600 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
600
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
I
C
50
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
I
Cpuls
100
Power dissipation per IGBT
T
C
= 25 °C
P
tot
200
W
Chip temperature T
j
+ 150 °C
Storage temperature T
stg
-55 ... + 150
Thermal resistance, chip case R
thJC
≤ 0.6 K/W
Diode thermal resistance, chip case R
thJCD
≤ 1.5
Insulation test voltage, t = 1min. V
is
2500 Vac
Creepage distance - 16 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56