Semiconductor Group 1 Feb-14-1997
BSM 200 GB 120 DL
IGBT Power Module
Preliminary data
• Low Loss IGBT
• Low inductance halfbridge
• Including fast free- wheeling diodes
• Package with insulated metal base plate
Type V
CE
I
C
Package Ordering Code
BSM 200 GB 120 DL 1200V 340A HALF-BRIDGE 2 C67076-A2300-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
1200 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1200
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 80 °C
I
C
200
340
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
I
Cpuls
400
680
Power dissipation per IGBT
T
C
= 25 °C
P
tot
1400
W
Chip temperature T
j
+ 150 °C
Storage temperature T
stg
-40 ... + 125
Thermal resistance, chip case R
thJC
≤ 0.09 K/W
Diode thermal resistance, chip case R
thJCD
≤ 0.18
Insulation test voltage, t = 1min. V
is
2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56