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BSM151

器件描述:SIMOPAC Module (Power module Single switch N channel Enhancement mode)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:161.23KB,共6页
Sponsor by e络盟
器件资料摘要:
Semiconductor Group 44 03.96
Type Ordering Code
BSM 151 C67076-A1004-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS
500 V
Drain-gate voltage, R
GS
= 20 kΩ V
DGR
500
Gate-source voltage V
GS
± 20
Continuous drain current, T
C
= 25 ˚C I
D
48 A
Pulsed drain current, T
C
= 25 ˚C I
D puls
192
Operating and storage temperature range T
j
, T
stg
– 55 … + 150 ˚C
Power dissipation, T
C
= 25 ˚C P
tot
625 W
Thermal resistance
Chip-case R
th JC
≤ 0.20
K/W
Insulation test voltage
2)
, t = 1 min. V
is
2500 V
ac
Creepage distance, drain-source – 16 mm
Clearance, drain-source – 11
DIN humidity category, DIN 40 040 – F –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1)
See chapter Package Outline and Circuit Diagrams.
2)
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
SIMOPAC
®
Module BSM 151
V
DS
= 500 V
I
D
= 48 A
R
DS(on)
= 0.12 Ω
a71 Power module
a71 Single switch
a71 N channel
a71 Enhancement mode
a71 Package with insulated metal base plate
a71 Package outline/Circuit diagram: 1
1)