Semiconductor Group 1 Nov-08-1996
BSM150GAL120DN2E3166
IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type V
CE
I
C
Package Ordering Code
BSM150GAL120DN2E31661200V 210A HALF BRIDGE GAL 2 C67076-A2112-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
1200 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1200
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 80 °C
I
C
150
210
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
I
Cpuls
300
420
Power dissipation per IGBT
T
C
= 25 °C
P
tot
1250
W
Chip temperature T
j
+ 150 °C
Storage temperature T
stg
-55 ... + 150
Thermal resistance, chip case R
thJC
≤ 0.1 K/W
Diode thermal resistance, chip case R
thJCD
≤ 0.25
Diode thermal resistance, chip-case,chopper RTHJCDC ≤ 0.125
Insulation test voltage, t = 1min. V
is
4000 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56