BSL307SP
器件描述:OptiMOS -P Small-Signal-Transistor
文件大小:78.34KB,共8页
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器件资料摘要:
2001-12-12Page 1
Preliminary data
BSL307SP
OptiMOS
-P Small-Signal-Transistor
Product Summary
V
DS
-30 V
R
DS(on)
43 mΩ
I
D
-5.5 A
Feature
• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
P-TSOP-6-1
5
6
4
1
3
2
Gate
pin 3
Drain
pin 1,2,
Source
pin 4
5,6
Marking
sPC
Type Package Ordering Code
BSL307SP P-TSOP-6-1 Q67042-S4067
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-5.5
-4.4
A
Pulsed drain current
T
A
=25°C
I
D puls
-22
Avalanche energy, single pulse
I
D
=-5.5 A , V
DD
=-25V, R
GS
=25Ω
E
AS
44 mJ
Reverse diode dv/dt
I
S
=-5.5A, V
DS
=24V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
-6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
2 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56