Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM100GD120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200 V
Kollektor-Dauergleichstrom
T
C
= 80 °C I
C,nom.
100 A
DC-collector current
T
C
= 25 °C I
C
160 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C I
CRM
200 A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor P
tot
650 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES +/- 20V V
Dauergleichstrom
DC forward current
I
F
100 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms I
FRM
200 A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t 1,71 kA
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min. V
ISOL
2,5 kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min. typ. max.
Kollektor-Emitter Sättigungsspannung
I
C
= 100A, V
GE
= 15V, T
vj
= 25°C V
CE sat
- 2,1 2,6 V
collector-emitter saturation voltage
I
C
= 100A, V
GE
= 15V, T
vj
= 125°C - 2,4 2,9 V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 4mA, V
CE
= V
GE
, T
vj
= 25°C V
GE(th)
4,5 5,5 6,5 V
Gateladung
gate charge
V
GE
= -15V...+15V Q
G
- 1,1 - µC
Eingangskapazität
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V C
ies
- 6,5 - nF
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V C
res
- 0,42 - nF
Kollektor-Emitter Reststrom
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C I
CES
- 10 500 µA
collector-emitter cut-off current
V
CE
= 1200V, V
GE
= 0V, T
vj
= 125°C - 500 - µA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C I
GES
- - 400 nA
prepared by: Mark Münzer date of publication: 09.09.1999
approved by: M. Hierholzer revision: 2
1(8) Seriendatenblatt_BSM100GD120DLC.xls