BSD223P
器件描述:OptiMOS -P Small-Signal-Transistor
文件大小:74.63KB,共8页
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器件资料摘要:
2002-07-04Page 1
Preliminary data
BSD 223P
OptiMOS
-P Small-Signal-Transistor
Product Summary
V
DS
-20 V
R
DS(on)
1.2 Ω
I
D
-0.39 A
Feature
• Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
SOT-363
VPS05604
6
3
1
5
4
2
Gate
pin 2,5
Drain
pin 6,3
Source
pin 1,4
MOSFET1: 1,2,6
MOSFET2: 3,4,5
Marking
X1s
Type Package Ordering Code
BSD 223P SOT-363 Q67042-S4059
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.39
-0.31
A
Pulsed drain current
T
A
=25°C
I
D puls
-1.56
Avalanche energy, single pulse
I
D
=-0.39 A , V
DD
=-10V, R
GS
=25Ω
E
AS
1.4 mJ
Reverse diode dv/dt
I
S
=-0.39A, V
DS
=-16V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
-6 kV/µs
Gate source voltage V
GS
±12
V
Power dissipation
T
A
=25°C
P
tot
0.25 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56