DS11301 Rev. D-3 1 of 3 BS807
BS807
N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5cm
2
area.
2. Pulse test: Pulse width = 80µs, duty cycle = 1%.
c183 High Breakdown Voltage
c183 High Input Impedance
c183 Fast Switching Speed
c183 Specially Suited for Telephone Subsets
c183 Ideal for Automated Surface Mount Assembly
Characteristic Symbol Value Unit
Max Forward Current (continuous) IF 0.3 A
Forward Voltage Drop (typ)
@V
GS
= 0, I
F
= 0.3A, T
j
= 25°C
V
F 0.85 V
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 200 V
Drain-Gate Voltage VDGS 200 V
Gate-Source Voltage (pulsed) (Note 2) VGS ±20 V
Drain Current (continuous) ID 100 mA
Power Dissipation @ T
C
= 50°C (Note 1) P
d 310 mW
Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C
c183 Case: SOT-23, Plastic
c183 Terminals: Solderable per
MIL-STD-202 Method 208
c183 Pin Connection: See Diagram
c183 Marking: S07
c183 Weight: 0.008 grams (approx.)
Mechanical Data
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
D
SG
SOT-23
Dim Min Max
A 0.37 0.51
B 1.19 1.40
C 2.10 2.50
D 0.89 1.05
E 0.45 0.61
G 1.78 2.05
H 2.65 3.05
J 0.013 0.15
K 0.89 1.10
L 0.45 0.61
M 0.076 0.178
All Dimensions in mm