BS62LV8003
器件描述:Very Low Power/Voltage CMOS SRAM 1M X 8 bit
文件大小:217.48KB,共10页
Sponsor by e络盟
器件资料摘要:
Revision 2.4
April 2002
1
R0201-BS62LV8003
Very Low Power/Voltage CMOS SRAM
1M X 8 bit
• Wide Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
Vcc = 3V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max) at Vcc = 3V
-10 100ns (Max) at Vcc = 3V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
The BS62LV8003 is a high performance, very low power CMOS
Static Random Access Memory organized as 1,048,576 words by 8 bits
and operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.5uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable(CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS62LV8003 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV8003 is available in 44 pin TSOP2 and 48-pin BGA type.