BS62LV4001
器件描述:Low Power/Voltage CMOS SRAM 512K X 8 bit
文件大小:341.64KB,共11页
Sponsor by e络盟
器件资料摘要:
R0201-BS62LV4001
Revision 2.5
April 2002
1
BSI
Low Power/Voltage CMOS SRAM
512K X 8 bit
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Low power consumption
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.25uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 45mA (Max.) operation current
I -grade: 50mA (Max.) operating current
1.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
-10 100ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
The BS62LV4001 is a high performance, low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with maximum access time of 70/ 100ns
in 3.0V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62LV4001 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV4001 is available in DICE form, JEDEC standard 32 pin
SOP, 32 pin TSOPII, 32 pin TSOP and 32 pin Small SOP.