BS62LV4000STC
器件描述：Very Low Power/Voltage CMOS SRAM 512K X 8 bit
器件厂商：BSI [Brilliance Semiconductor]
文件大小：213.09KB，共10页
Sponsor by e络盟器件资料摘要：
Revision 2.2
April. 2001
1
R0201-BS62LV4000
Very Low Power/Voltage CMOS SRAM
512K X 8 bit
• Wide Vcc operation voltage : 2.7V ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max) at Vcc = 3.0V
-10 100ns (Max) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
The BS62LV4000 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.5uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62LV4000 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV4000 is available in the JEDEC standard 32 pin
, 8mmx13.4mm STSOP, and 8mmx20mm TSOP.
GENERAL DESCRIPTION FEATURES
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
2048 X 2048
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Buffer
Output
Address Input Buffer
Data
Buffer
Input
Control
Gnd
Vdd
OE
WE
CE
DQ5
DQ4
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
8
8
8
8
DQ7
DQ6
DQ3
DQ2
DQ1
DQ0
16
256
2048
2048
22
A11 A9 A8 A3 A2 A1 A0 A10
BS62LV4000
POWER DISSIPATION
SPEED
( ns )
STANDBY
( ICCSB1 , Max )
Operating
( ICC, Max )
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3.0V Vcc=3.0V Vcc=3.0V
PKG TYPE
BS62LV4000TC TSOP-32
BS62LV4000STC
+0
O
C to +70
O
C 2.7V ~ 3.6V 70 / 100 8uA 20mA
STSOP-32
BS62LV4000TI TSOP-32
BS62LV4000STI
-40
O
C to +85
O
C 2.7V ~ 3.6V 70 / 100 12uA 25mA
STSOP-32
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
•
BS62LV4000TC
BS62LV4000STC
BS62LV4000TI
BS62LV4000STI
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BSI
April. 2001
1
R0201-BS62LV4000
Very Low Power/Voltage CMOS SRAM
512K X 8 bit
• Wide Vcc operation voltage : 2.7V ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max) at Vcc = 3.0V
-10 100ns (Max) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
The BS62LV4000 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.5uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62LV4000 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV4000 is available in the JEDEC standard 32 pin
, 8mmx13.4mm STSOP, and 8mmx20mm TSOP.
GENERAL DESCRIPTION FEATURES
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
2048 X 2048
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Buffer
Output
Address Input Buffer
Data
Buffer
Input
Control
Gnd
Vdd
OE
WE
CE
DQ5
DQ4
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
8
8
8
8
DQ7
DQ6
DQ3
DQ2
DQ1
DQ0
16
256
2048
2048
22
A11 A9 A8 A3 A2 A1 A0 A10
BS62LV4000
POWER DISSIPATION
SPEED
( ns )
STANDBY
( ICCSB1 , Max )
Operating
( ICC, Max )
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3.0V Vcc=3.0V Vcc=3.0V
PKG TYPE
BS62LV4000TC TSOP-32
BS62LV4000STC
+0
O
C to +70
O
C 2.7V ~ 3.6V 70 / 100 8uA 20mA
STSOP-32
BS62LV4000TI TSOP-32
BS62LV4000STI
-40
O
C to +85
O
C 2.7V ~ 3.6V 70 / 100 12uA 25mA
STSOP-32
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
•
BS62LV4000TC
BS62LV4000STC
BS62LV4000TI
BS62LV4000STI
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BSI