BS62LV2565DI
器件描述:Very Low Power/Voltage CMOS SRAM 32K X 8 bit
文件大小:330.77KB,共11页
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器件资料摘要:
R0201-BS62LV2565 Revision 2.2
April 2001
1
A6
Very Low Power/Voltage CMOS SRAM
32K X 8 bit
• Wide Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns (Max.) = 5.0V
-70 70ns (Max.) = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
The BS62LV2565 is a high performance, very low power CMOS
Static Random Access Memory organized as 32,768 words by 8 bits
and operates from a wide range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.4uA and maximum access time of 55ns in 5V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62LV2565 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV2565 is available in the JEDEC standard 28 pin
330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and
8mmx13.4mm TSOP (normal type).