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BS616UV8011BC

器件描述:Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
器件厂商:BSI [Brilliance Semiconductor]
文件大小:221.2KB,共10页
Sponsor by e络盟
器件资料摘要:
Revision 2.2
April 2001
1
R0201-BS616UV8011
BSI
Ultra Low Power/Voltage CMOS SRAM
512K X 16 bit
• Ultra low operation voltage : 1.8 ~ 2.3V
• Ultra low power consumption :
Vcc = 2.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=2V
-10 100ns (Max.) at Vcc=2V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
„ DESCRIPTION
„ FEATURES
Row
Decoder
Memory Array
2048 x 4096
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A9 A8 A7
Data
Input
Buffer
Control
Gnd
Vcc
OE
A15
A1
16
16
16
16
WE
CE1
D15
D0
A0
A13
A14
A2
16
256
4096
„ BLOCK DIAGRAM
204822
A17
A16
A10
A12
A6A11
A3
Address
Input
Buffer
A5
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
BS616UV8011
A4
A18
LB OE
A0 A1 A2 CE2
D8
UB
A3 A4
CE1
D0
D3
VCC
VCC D12 A16 D4 VSS
A15
12 A13 WE D7
D9 D10 A5 A6 D1 D2
VSS D11 A17 A7
D14 D13 A14 D5 D6
D15 NC.A
A8 A8 A9 A10 A11
NC
1
A
B
C
D
E
F
G
H
123456
VSS
The BS616UV8011 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits and
operates from a wide range of 1.8V to 2.3V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.6uA and maximum access time of 70/100ns in 2V operation.
Easy memory expansion is provided by an active LOW chip enable(CE1),
active HIGH chip enable (CE2), active LOW output enable(OE) and
three-state output drivers.
The BS616UV8011 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV8011 is available in 48-pin BGA package.
SPEED
(ns) STANDBY
(ICCSB1, Max)
Operating
(ICC , Max)
Vcc
RANGE
Vcc=2V Vcc=2V
PKG TYPE
BS616UV8011DC DICE
BS616UV8011BC BGA -48 -0810
BS616UV8011FC
+0
O
C to +70
O
C 1.8 ~ 2.3V 70 / 100 15uA 20mA
BGA -48 -0912
BS616UV8011DI DICE
BS616UV8011BI BGA-48 -0810
BS616UV8011FI
-
40
O
C to +85
O
C 1.8 ~ 2.3V 70 / 100 20uA 25mA
BGA-48 -0912
CE2
48-Ball CSP top View
Vcc=2V
OPERATING
TEMPERATURE
PRODUCT FAMILY
POWER DISSIPATION