BS616UV8011BC
器件描述:Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
文件大小:221.2KB,共10页
Sponsor by e络盟
器件资料摘要:
Revision 2.2
April 2001
1
R0201-BS616UV8011
BSI
Ultra Low Power/Voltage CMOS SRAM
512K X 16 bit
• Ultra low operation voltage : 1.8 ~ 2.3V
• Ultra low power consumption :
Vcc = 2.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=2V
-10 100ns (Max.) at Vcc=2V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin