BS616UV8010
器件描述:Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
文件大小:208.63KB,共9页
Sponsor by e络盟
器件资料摘要:
Revision 2.4
April 2002
1
R0201-BS616UV8010
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
Vcc
RANGE
Vcc=2 V
PKG TYPE
BS616UV8010BC +0
O
C to +70
O
C 1.8V ~ 3.6V 70 / 100 2uA 3uA 15mA 20mA
BGA -
48 -0810
BS616UV8010BI
-
40
O
C to +85
O
C 1.8V ~ 3.6V 70 / 100 4uA 6uA 20mA 25mA BGA - 48 -0810
Ultra Low Power/Voltage CMOS SRAM
512K X 16 bit
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0V C-grade: 15mA (Max.) operating current
I-grade : 20mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=2V
-10 100ns (Max.) at Vcc=2V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin