Revision 1.1
Jan. 2004
1
R0201-BS616UV2019
Ultra Low Power/Voltage CMOS SRAM
128K X 16 bit
• Wide Vcc operation voltage :
C-grade: 1.8V~3.6V
I-grade: 1.9V~3.6V
(Vcc_min.=1.65V at 25
o
C)
• Ultra low power consumption :
Vcc = 2.0V C-grade: 8mA (Max.) operating current
I -grade: 10mA (Max.) operating current
0.20uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade: 11mA (Max.) operating current
I -grade: 13mA (Max.) operating current
0.30uA (Typ.) CMOS standby current
• High speed access time :
-85 85ns (Max.)
-10 100ns (Max.)
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
The BS616UV2019 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.2uA at 2.0V/25
o
C and maximum access time of 85ns at 85
o
C.
Easy memory expansion is provided by active LOW chip enable (CE),
active LOW output enable(OE) and three-state output drivers.
The BS616UV2019 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV2019 is available in DICE form, JEDEC standard 48-pin
TSOP Type I package and 48-ball BGA package.
„ DESCRIPTION
„ FEATURES
„ BLOCK DIAGRAM
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
BS616UV2019
48-ball BGA top view
SPEED
( ns )
STANDBY
( ICCSB1, Max )
Operating
( ICC, Max )
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
C-grade:1.8~3.6V
Vcc=3.0V Vcc=3.0V
PKG TYPE
BS616UV2019DC DICE
BS616UV2019TC TSOP1-48
BS616UV2019AC
+0
O
C to +70
O
C 1.8V ~3.6V 85/100
3.0uA
11mA
BGA-48-0608
BS616UV2019DI DICE
BS616UV2019TI TSOP1-48
BS616UV2019AI
-40
O
C to +85
O
C 1.9V ~ 3.6V
85/100 5.0uA 13mA
BGA-48-0608
BSI
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A3 A2 A1
Data
Buffer
Input
Control
Gnd
Vcc
OE
WE
CE2,CE
DQ15
DQ0
A16
A5
A6
A7
A15
A13
16
16
16
16
14
128
2048
102420
A14
A12
A9
A4
A0A11
A8
Address
Input
Buffer
A10
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
G
H
F
E
D
C
B
A
123456
D15
D14
VSS
D9
D8
LB
VCC
N.C. A8 A9
D13
A12
A14
D12
D11
D10 A5
UB
OE
A3
A0
A11A10
A13
A15
WE
D5
A16
A7
A6
D4
D3
D1
D7
D6
D2
A4
A1 A2
D0
N.C. VSS
VCC
N.C.
CE
N.C.
N.C.
N.C.
24 25
1 48A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
/WE
CE2
NC
/UB
/LB
NC
NC
A7
A6
A5
A4
A3
A2
A1
9
10
13
16
17
A16
NC
VSS
IO15
IO7
IO14
IO6
IO13
IO5
IO12
IO4
VCC
IO11
IO3
IO10
IO2
IO9
IO1
IO8
IO0
/OE
VSS
/CE
A0
47
BS616UV2019TC
BS616UV2019TI
37
27
46
Vcc=2.0V Vcc=2.0V
2.0uA
3.0uA
8mA
10mA
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
• Data retention supply voltage as low as 1.0V
I-grade:1.9~3.6V
POWER DISSIPATION