R0201-BS616UV2011 Revision 2.5
April 2002
1
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0 V C-grade: 15mA (Max.) operating current
I-grade: 20mA (Max.) operating current
0.08uA (Typ.) CMOS standby current
Vcc = 3.0 V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 2.0V
-10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616UV2011 is a high performance, Ultra low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.08uA and maximum access time of 70/100ns in 2.0V operation.
Easy memory expansion is provided by an active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616UV2011 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV2011 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package , JEDEC standard 48-pin TSOP Type I package
and 48-ball BGA package.
„ DESCRIPTION
„ FEATURES
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A3 A2 A1
Data
Input
Buffer
Control
Gnd
Vcc
OE
DQ0
A16
A7
A15
16
16
16
16
WE
CE
DQ15
A5
A6
A13
14
128
2048
„ BLOCK DIAGRAM
102420
A14
A12
A9
A4
A0A11
A8
Address
Input
Buffer
A10
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Bril rves the right to modify document contents without notice.liance Semiconductor Inc. rese
BS616UV2011
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS616UV2011EC
BS616UV2011EI
48-ball BGA top view
G
H
F
E
D
C
B
A
123456
D15
D14
VSS
D9
D8
LB
VCC
N.C. A8 A9
D13
A12
A14
D12
D11
D10 A5
UB
OE
A3
A0
A11A10
A13
A15
WE
D5
A16
A7
A6
D4
D3
D1
D7
D6
D2
A4
A1 A2
D0
N.C. VSS
VCC
N.C.
CE
N.C.
N.C.
N.C.
Ultra Low Power/Voltage CMOS SRAM
128K X 16 bit
BSI
POWER DISSIPATION
SPEED
(
ns )
STANDBY
( I CCSB1, Max )
Operating
( I CC , Max )
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
PKG TYPE
BS616UV2011DC DICE
BS616UV2011EC TSOP2-44
BS616UV2011TC TSOP1-48
BS616UV2011AC
O
C to +70
O
C1.8V ~
BGA-48-0608
+0 3.6V 70/100 0.5uA 0.7uA 15mA 20mA
BS616UV2011DI DICE
BS616UV2011EI TSOP2-44
BS616UV2011TI TSOP1-48
BS616UV2011AI
-40
O
C to +85
O
C 1.8V ~ 25mA 3.6V 70/100 1uA 1.5uA 20mA
BGA-48-0608
Vcc=
2.0V
Vcc=
2.0V
Vcc=
3.0V
Vcc=
2.0V
Vcc=
3.0V