BS616LV8023
器件描述:Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
文件大小:204.08KB,共11页
Sponsor by e络盟
器件资料摘要:
Revision 2.0
April 2002
1
Very Low Power/Voltage CMOS SRAM
512K x 16 or 1M x 8 bit switchable
BS616LV8023
R0201-BS616LV8023
The BS616LV8023 is a high performance, very low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits or
1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.5uA and maximum access time of 70/100ns in 3.0V operation.
Easy memory expansion is provided by an active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and three-state output drivers.
The BS616LV8023 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV8023 is available in 48-pin BGA type.
POWER DISSIPATION
SPEED
(ns)
STANDBY
(ICCSB1, Max)
Operating
(ICC
PRODUCT
FAMILY
PKG TYPE
BS616LV8023BC +0
O
C to +70
O
C 2.4V ~ 3.6V 70 / 100 3uA 20mA BGA-48-0810
BS616LV8023BI -40
O
C to +85
O
C 2.4V ~ 3.6V 70 / 100 6uA 25mA BGA-48-0810
• Very low operation voltage : 2.4 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc= 3.0V
-10 100ns (Max.) at Vcc= 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin