BS616LV8019
器件描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
文件大小:271.09KB,共9页
Sponsor by e络盟
器件资料摘要:
Revision 2.1
Jan. 2004
1
R0201-BS616LV8019
Very Low Power/Voltage CMOS SRAM
512K X 16 bit (Single CE Pin)
The BS616LV8019 is a high performance, very low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits and
operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 8.0uA at 5V/25
o
C and maximum access time of 55ns at 5.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV8019 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV8019 is available in 48B BGA and 44L TSOP2 packages.