Revision 2.4
April 2002
1
R0201-BS616LV8012
Very Low Power/Voltage CMOS SRAM
512K X 16 bit
The BS616LV8012 is a high performance, very low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.5uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by an active LOW chip enable(CE1),
active HIGH chip enable (CE2), active LOW output enable(OE) and
three-state output drivers.
The BS616LV8012 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV8012 is available in 48-pin BGA package.
„ DESCRIPTION
„ FEATURES
„ BLOCK DIAGRAM
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
BS616LV8012
LB OE A0 A1 A2 CE2
D8
D9
D10
D12
A16 D4
VSS
A15
D15 NC. A12
UB A3 A4 CE1 D0
A5 A6 D1 D2
VSS D11 A17 A7 D3 VCC
VCC
D14 D13 A14 D5 D6
A13 WE D7
A8 A8 A9 A10 A11
NC
1
A
B
C
D
E
F
G
H
123456
VSS
• Very low operation voltage : 2.4~5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 45mA (Max.) operating current
I-grade : 50mA (Max.) operating current
3uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=3V
-10 100ns (Max.) at Vcc=3V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
POWER DISSIPATION
SPEED
(ns)
STANDBY
(I , Max)CCSB1
Operating
(I , Max)CCPRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3V Vcc=3V Vcc=5V Vcc=3V Vcc=5V
PKG TYPE
BS616LV8012BC +0
O
C to +70
O
C2.4
BS616LV8012BI -40
O
C to +85
O
C2.4
V ~ 5.5V 70 / 100 3uA 30uA 20mA 45mA BGA-48-0810
V ~ 5.5V 70 / 100 6uA 100uA 25mA 50mA BGA-48-0810
Row
Decoder
Memory Array
2048 x 4096
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A9 A8 A7
Data
Input
Buffer
Control
Vss
Vcc
OE
A15
A1
16
16
16
16
WE
CE1
D15
D0
A0
A13
A14
A2
16
256
4096
204822
A17
A16
A10
A12
A6A11
A3
Address
Input
Buffer
A5
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
A4
A18
CE2
48-Ball CSP top View
BSI