BS616LV4025BC
器件描述:Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
文件大小:190.35KB,共11页
Sponsor by e络盟
器件资料摘要:
Revision 2.4
April 2002
1
BSI
Very Low Power/Voltage CMOS SRAM
256K x 16 or 512K x 8 bit switchable
The BS616LV4025 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits or
524,288 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 1.5uA and maximum access time of 70/55ns in 5V operation.
Easy memory expansion is provided by an active HIGH chip
enable2(CE2), and active LOW chip enable1(CE1), an active LOW
output enable(OE) and three-state output drivers.
The BS616LV4025 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4025 is available in DICE form and 48-pin BGA type.
• Operation voltage : 4.5~5.5V
• Low power consumption :
Vcc = 5.0V C-grade: 45mA (Max.) operating current
I-grade : 50mA (Max.) operating current
1.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=5V
-55 55ns (Max.) at Vcc=5V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin