BS616LV2023AI
器件描述:Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
文件大小:249.22KB,共11页
Sponsor by e络盟
器件资料摘要:
Revision 2.4
April 2002
1
Very Low Power/Voltage CMOS SRAM
128K x 16 or 256K x 8 bit switchable
The BS616LV2023 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits or
262,144 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.1uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and three-state output drivers.
The BS616LV2023 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2023 is available in DICE form and 48-pin BGA type.
• Very low operation voltage : 2.4 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
-10 100ns (Max.) at Vcc = 3.0V
•Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin