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BS616LV2012AC

器件描述:Very Low Power/Voltage CMOS SRAM 128K X 16 bit
器件厂商:BSI [Brilliance Semiconductor]
文件大小:217.47KB,共10页
Sponsor by e络盟
器件资料摘要:
Revision 2.4
April 2002
1
R0201-BS616LV2012
Very Low Power/Voltage CMOS SRAM
128K X 16 bit
• Very low operation voltage : 2.7 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 30mA (Max.) operating current
I -grade: 35mA (Max.) operating current
0.15uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
-10 100ns (Max.) at Vcc = 3.0V
•Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV2012 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.15uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616LV2012 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2012 is available in DICE form, JEDEC standard
48-pin TSOP Type I package and 48-pin BGA type.
„ DESCRIPTION„ FEATURES
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A3 A2 A1
Data
Input
Buffer
Control
Gnd
Vcc
OE
DQ0
A16
A7
A15
16
16
16
16
WE
CE
DQ15
A5
A6
A13
14
128
2048
„ BLOCK DIAGRAM
102420
A14
A12
A9
A4
A0A11
A8
Address
Input
Buffer
A10
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
BS616LV2012
G
H
F
E
D
C
A9A8
D15
D14
VSS
D9
D13
A12 A13 WE
A14
D12
D11
D10 A5
B
A
D8 UB
LB
1
OE
A3
A0
23
A11A10
A15 D5 D6
A16 D4N.C.
A7
A6
D3
D1
D7
D2
A4
A1 A2
45
D0
6
VCC VSS
VCC
N.C.
CE
N.C.N.C.
N.C.
N.C.
48-ball BGA top view
POWER DISSIPATION
SPEED
(ns)
STANDBY
( ICCSB1, Max )
Operating
( ICC, Max )
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3.0V Vcc=3.0V Vcc=3.0V
PKG TYPE
BS616LV2012DC DICE
BS616LV2012TC TSOP1-48
BS616LV2012AC
+0
O
C to +70
O
C 2.7V ~ 3.6V 70 / 100 8uA 30mA
BGA-48-0608
BS616LV2012DI DICE
BS616LV2012TI TSOP1-48
BS616LV2012AI
-40
O
C to +85
O
C 2.7V ~ 3.6V 70 / 100 12uA 35mA
BGA-48-0608
BSI