BS616LV2012AC
器件描述:Very Low Power/Voltage CMOS SRAM 128K X 16 bit
文件大小:217.47KB,共10页
Sponsor by e络盟
器件资料摘要:
Revision 2.4
April 2002
1
R0201-BS616LV2012
Very Low Power/Voltage CMOS SRAM
128K X 16 bit
• Very low operation voltage : 2.7 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 30mA (Max.) operating current
I -grade: 35mA (Max.) operating current
0.15uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
-10 100ns (Max.) at Vcc = 3.0V
•Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV2012 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.15uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616LV2012 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2012 is available in DICE form, JEDEC standard
48-pin TSOP Type I package and 48-pin BGA type.