BS616LV1622TC-55
器件描述:Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
文件大小:255.57KB,共10页
Sponsor by e络盟
器件资料摘要:
Revision 2.1
Jan. 2004
1
BSI
Very Low Power/Voltage CMOS SRAM
1M x 16 or 2M x 8 bit switchable
The BS616LV1626 is a high performance, very low power CMOS Static
Random Access Memory organized as 1,048,676 words by 16 bits or
2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc
range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 15uA at 5.0V/25
o
C and maximum access time of 55ns at 5.0V/85
o
C .
This device provide three control inputs and three states output drivers
for easy memory expansion.
The BS616LV1626 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1626 is available in 48-pin 12mmx20mm TSOP1 package.
• Vcc operation voltage : 4.5 ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade: 113mA (@55ns) operating current
I -grade: 115mA (@55ns) operating current
C-grade: 90mA (@70ns) operating current
I -grade: 92mA (@70ns) operating current
15uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns
-70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible