DS21902 Rev. D-3 1 of 2 BS250
BS250
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
c183 High Input Impedance
c183 Fast Switching Speed
c183 CMOS Logic Compatible Input
c183 No Thermal Runaway or Secondary Breakdown
c183 Case: TO-92, Plastic
c183 Leads: Solderable per MIL-STD-202,
Method 208
c183 Pin Connection: See Diagram
c183 Approx Weight: 0.18 grams
Mechanical Data
Features
Characteristic Symbol Value Unit
Drain-Source Voltage –VDSS 60 V
Drain-Gate Voltage –VDGS 60 V
Gate-Source-Voltage (pulsed) VGS ±20 V
Drain Current (continuous) –ID 250 mA
Power Dissipation @T
C
= 25°C (Note 1) P
d 830 mW
Operating and Storage Temperature Range Tj, TSTG -55 +150 °C
Characteristic Symbol Value Unit
Maximum Forward Current (continuous) IF 0.15 A
Forward Voltage Drop (Typ.) @ V
GS
= 0, I
F
= 0.15A, T
j
= 25°C V
F 0.85 V
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
D
SGD
HH
BOTTOM
VIEW
E A
B
C
G
TO-92
Dim Min Max
A 4.45 4.70
B 4.46 4.70
C 12.7 —
D 0.41 0.63
E 3.43 3.68
G 2.42 2.67
H 1.14 1.40
All Dimensions in mm
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage -V(BR)DSS 60 70 — V ID = 100µA, VGS = 0
Gate Threshold Voltage -VGS(th) — 1.0 3.0 V VGS =VDS, –ID = 1.0mA
Gate-Body Leakage Current -IGSS — — 20 nA -VGS = 15V, VDS = 0
Drain-Source Cutoff Current -IDSS — — 0.5 µA -VDS = 25V, VGS = 0
Drain-Source ON Resistance rDS (ON) — 3.5 5.0 c87 -VGS = 10V, –ID = 0.2A
Thermal Resistance, Junction to Ambient Air Rc113JA — — 150 K/W Note 1
Forward Transconductance gFS — 150 — mS
-V
DS
= 10V, –I
D
= 0.2A,
f = 1.0MHz
Input Capacitance Ciss —60—pF
-V
DS
= 10V, V
GS
= 0,
f = 1.0MHz
Switching Times
Turn On Time
Turn Off Time
t
on
t
off
—
—
5
25
—
—
ns
-V
GS
= 10V, –V
DS
= 10V,
R
D
= 100c87