DS21901 Rev. E-3 1 of 2 BS208
BS208
P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
c183 Case: TO-92, Plastic
c183 Leads: Solderable per MIL-STD-202,
Method 208
c183 Pin Connections: See Diagram
c183 Weight: 0.18 grams (approx.)
Mechanical Data
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
2. Pulse Test: Pulse width = 80µs, duty factor = 1%.
Characteristic Symbol Value Unit
Drain-Source-Voltage -VDSS 240 V
Drain-Gate-Voltage -VDGS 200 V
Gate-Source-Voltage (pulsed) (Note 2) VGS ±20 V
Drain-Current (continuous) -ID 200 mA
Power Dissipation @T
C
= 25°C (Note 1) P
d 830 mW
Operating and Storage Temperature Range Tj,TSTG –55 to +150 °C
c183 High Breakdown Voltage
c183 High Input Impedance
c183 Fast Switching Speed
c183 Low Drain-Source On-Resistance
c183 Specially Suited for Telephone Subsets
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Maximum Forward Current (continuous) IF 0.22 A
Forward Voltage Drop (Typical)
@V
GS
= 0, I
F
= 0.75A, T
j
= 25°C
V
F 0.85 V
D
SGD
HH
BOTTOM
VIEW
E A
B
C
G
TO-92
Dim Min Max
A 4.45 4.70
B 4.46 4.70
C 12.7 —
D 0.41 0.63
E 3.43 3.68
G 2.42 2.67
H 1.14 1.40
All Dimensions in mm
Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage -V(BR)DSS 200 230 — V -ID = 100µA, VGS = 0
Gate-Body Leakage Current
-I
GSS — — 10 nA
-V
GS
= 15V, V
DS
= 0
Drain-Source Cutoff Current -IDSS
-I
DSX
——
1.0
25
µA
-V
DS
=130V, V
GS
= 0
-V
DS
= 10V, -V
GS
= 0.2V
Gate-Source Threshold Voltage
-V
GS(th) — 2.8 4.0 V
V
GS
=V
DS
, -I
D
= 1.0mA
Drain-Source ON Resistance
r
DS(ON) — 7.0 14 c87
-V
GS
= 10V, -I
D
= 100 mA
Thermal Resistance Junction to Ambient Rc113JA — — 150 K/W Note 1
Input Capacitance
Output Capacitance
Feedback Capacitance
C
iss
C
oss
C
rss
—
270
35
6.0
—pF-VDS = 20V, VGS= 0, f =1.0MHz
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified