FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DMOS Transistors (N-Channel)
G
SD
.181 (4.6)
m
i
n.
.492
(
1
2
.
5)
.181 (
4
.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 °C

ambient temperature unless otherwise specified
.098 (2.5)
max
.
∅ .022 (0.55)
4/98
BS170
On special request, this transistor is also manufactured
in the pin configuration TO-18.
Inverse Diode
Symbol Value Unit
Drain-Source Voltage V
DSS
60 V
Drain-Gate Voltage V
DGS
60 V
Gate-Source Voltage (pulsed) V
GS
± 20 V
Drain Current (continuous) I
D
300 mA
Power Dissipation at T
amb
= 25 °C P
tot
0.83
1)
W
Junction Temperature T
j
150 °C
Storage Temperature Range T
s
–65 to +150 °C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Symbol Value Unit
Max. Forward Current (continuous)
at T
amb
= 25 °C
I
F
0.5 A
Forward Voltage Drop (typ.)
at V
GS
= 0, I
F
= 0.5 A, T
j
= 25 °C
V
F
0.85 V
♦ High input impedance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown