BS250P
器件描述:P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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器件资料摘要:
P-CHANNEL ENHANCEME
N
T
MOD
E
VERTICAL DMOS FET
ISSUE 2
SEPT 93
FEAT
URE
S
*
4
5
Volt V
DS
*R
D
S
(on
)
=14
Ω
REFER TO ZVP2106
A F
O
R GRAPHS
ABSO
L
U
TE M
A
XI
M
U
M
RATI
N
G
S
.
PA
RA
M
ETER
S
Y
M
B
O
L
V
A
L
U
E
U
N
I
T
Dr
ai
n-
S
o
ur
ce V
o
l
t
age
V
DS
-4
5
V
C
o
nt
i
n
u
o
us Dr
ai
n
C
u
r
r
e
nt
at
T
am
b
=2
5
C
I
D
-
230
m
A
Pul
sed Dr
ai
n C
u
r
r
e
n
t
I
DM
-3
A
G
a
te
-S
o
u
r
c
e
V
o
lta
g
e
V
GS
±
20
V
Pow
er
D
i
ssi
pat
i
on
at
T
am
b
=2
5
C
P
to
t
700
m
W
O
p
er
a
t
i
n
g
and
St
or
age T
e
m
p
er
a
t
ur
e
R
a
n
g
e
T
j
:T
st
g
-
55 t
o
+
150
C
E
L
EC
TRI
C
AL
CHARAC
TE
RI
S
T
I
CS (
a
t
T
am
b
= 25
C
)
.
PA
RA
M
ETER
S
Y
M
BO
L
M
I
N
.
T
Y
P
.
M
AX
.
U
N
I
T
C
O
N
D
I
T
I
O
N
S
.
Dr
ai
n-
S
o
ur
ce
Br
eakdow
n V
o
l
t
ag
e
BV
DSS
-45
V
I
D
=-
1
0
0
µ
A,
V
GS
=0
V
G
a
te
-S
o
u
r
c
e
Thr
eshol
d V
o
l
t
age
V
GS(
t
h
)
-1
-
3
.5
V
I
D
=-
1m
A,
V
DS
=V
GS
G
a
t
e
B
o
dy
Le
a
kage
I
GSS
-
2
0
n
A
V
GS=-
1
5
V,
V
DS
=0V
Zer
o
G
a
t
e
V
o
l
t
ag
e
Dr
ai
n C
u
r
r
e
nt
I
DS
S
-
500
nA
V
GS
=0V
,
V
DS
=-
2
5
V
St
at
i
c
D
r
a
i
n
-
So
ur
c
e
on-S
t
ate R
e
si
st
a
n
ce
(
1
)
R
D
S
(
on)
14
Ω
V
GS
=-
1
0
V
,
I
D
=-
200
m
A
For
w
ar
d
Tr
anscond
uct
a
nce (
1
)
(
2)
g
fs
15
0
m
S
V
DS
=-
1
0
V,
I
D
=-
2
00m
A
I
nput
C
a
paci
t
a
nce
(
2
)
C
is
s
60
p
F
V
GS
=0V
,
V
DS
=-
1
0
V
f
=
1M
Hz
Tur
n
-
O
n
Ti
m
e
(
2
)
(
3
)
t
(o
n
)
20
ns
V
DD
≈
-25
V
,
I
D
=
-
50
0m
A
T
u
r
n
-
O
ff T
i
m
e
(2
)(3
)
t
(o
f
f
)
20
ns
(1
) M
e
a
s
u
r
e
d
u
n
d
e
r p
u
ls
e
d
c
o
n
d
itio
n
s
. P
u
ls
e
w
i
d
t
h
=
3
0
0
µ
s.
D
u
t
y
c
y
cl
e
≤
2
%
(2
) S
a
m
p
le
te
s
t
(
3
)
Sw
i
t
c
h
i
n
g
t
i
m
e
s
m
easur
ed
w
i
t
h
a 50
Ω
so
ur
ce
i
m
p
e
da
n
c
e
a
n
d <5
n
s
r
i
s
e
t
i
m
e
on
a
pu
l
s
e
g
e
ne
r
a
t
o
r
BS250P
3-28
D G S
E-
Li
ne
T
O
92 Co
m
p
at
i
b
l
e