BS170
器件描述：N-Channel Enhancement Mode Field Effect Transistor
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：75.64KB，共5页
Sponsor by e络盟器件资料摘要：
April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
_______________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter BS170 MMBF170 Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1MΩ) 60 V
VGSS Gate-Source Voltage ± 20 V
ID Drain Current - Continuous 500 500 mA
- Pulsed 1200 800
PD Maximum Power Dissipation 830 300 mW
Derate Above 25°C 6.6 2.4 mW/°C
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
TL Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient 150 417 °C/W
BS170 Rev. C / MMBF170 Rev. D
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
_______________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter BS170 MMBF170 Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1MΩ) 60 V
VGSS Gate-Source Voltage ± 20 V
ID Drain Current - Continuous 500 500 mA
- Pulsed 1200 800
PD Maximum Power Dissipation 830 300 mW
Derate Above 25°C 6.6 2.4 mW/°C
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
TL Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient 150 417 °C/W
BS170 Rev. C / MMBF170 Rev. D
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation