BS250F
器件描述:P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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器件资料摘要:
SOT23
P-CHANNEL
ENHANCEME
N
T
MODE
VERTICAL DMOS
FET
ISSUE 3
- J
A
NUA
RY 1
996
P
A
R
T
M
ARKI
NG DE
T
A
IL
MX
ABSO
L
U
TE M
A
XI
M
U
M
RATI
NG
S.
PA
R
A
M
ETER
S
Y
M
BO
L
V
A
L
U
E
U
N
I
T
D
r
ai
n-
S
o
ur
ce Vo
l
t
age
V
DS
-4
5
V
C
o
nt
i
n
u
o
us Dr
ai
n
C
u
r
r
e
nt
at
T
am
b
=2
5
C
I
D
-9
0
m
A
Pu
l
s
ed Dr
ai
n Cur
r
e
nt
I
DM
-1
.6
A
G
a
t
e
S
o
urce
Vo
l
t
age
V
GS
±
20
V
Po
w
e
r
D
i
ssi
pat
i
on
at
T
am
b
=2
5
C
P
to
t
330
m
W
O
p
er
a
t
i
n
g and
St
or
age T
e
m
p
er
a
t
ur
e
R
a
n
g
e
T
j
:T
st
g
-
55 t
o
+
150
C
EL
ECTRI
C
AL
CHARACTERI
STI
CS (
a
t
T
am
b
= 25
C
u
n
l
e
ss other
w
i
s
e st
ate
d
)
.
PA
R
A
M
ETER
SY
M
B
O
L
M
I
N
.
T
Y
P
.
M
A
X
.
U
N
I
T
C
O
N
D
I
TI
O
N
S
.
D
r
ai
n-
S
o
ur
ce
Br
eakdow
n V
o
l
t
ag
e
BV
DS
S
-4
5
-
7
0
V
I
D
=-
1
0
0
µ
A,
V
GS
=0V
G
a
te
-S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
Vo
l
t
ag
e
V
GS
(
t
h
)
-1
-3
.5
V
I
D
=-
1
m
A,
V
DS
= V
GS
G
a
te
-B
o
d
y
L
e
a
k
a
g
e
I
GS
S
-2
0
n
A
V
GS
=-
15
V
,
V
DS
=0
V
Z
e
ro
G
a
te V
o
lt
ag
e D
r
a
i
n
Cu
r
r
e
nt
I
DS
S
-0
.5
.
µ
A
V
DS
=-
25
V
,
V
GS
=0V
St
at
i
c
D
r
a
i
n
-
So
ur
ce
On
-
S
t
a
t
e
R
e
si
stance
(
1
)
R
DS(
o
n)
91
4
Ω
V
GS
=-
1
0
V,
I
D
=-
20
0m
A
For
w
ar
d Tr
ansconduct
ance
(1
)(2
)
g
fs
90
m
S
V
DS
=-
10
V
,
I
D
=-
200
m
A
I
nput
C
a
paci
t
a
nce
(
2
)
C
is
s
25
pF
V
DS
=
-
10V,
V
GS
=0V,
f=
1
M
H
z
T
u
rn
-O
n
D
e
l
a
y
T
i
m
e
(
2
)(
3
)
t
d(
o
n
)
10
ns
V
DD
≈
-2
5
V
,
I
D
=-
200
m
A
R
i
s
e
T
i
m
e
(2
)(3
)
t
r
10
ns
T
u
rn
-O
ff D
e
la
y
T
i
m
e
(2
)
(
3
)
t
d(
o
f
f
)
10
ns
F
a
ll T
i
m
e
(2
)(3
)
t
f
10
ns
(
1
)
M
easur
ed
u
n
d
e
r
pu
l
s
ed
c
o
nd
i
t
i
o
n
s
.
W
i
dt
h
=300
µ
s.
Dut
y
cyc
l
e
≤
2
%
(2
) S
a
m
p
le
te
s
t
.
(
3
)
Sw
i
t
c
h
i
n
g
t
i
m
e
s
m
easur
ed
w
i
t
h
50
Ω
s
o
ur
ce
i
m
p
e
da
n
c
e
a
n
d <5
n
s
r
i
s
e
t
i
m
e
on
a
pu
l
s
e
g
e
ne
r
a
t
o
r
S
p
ic
e
p
a
ra
m
e
te
r d
a
ta
is
a
v
a
ila
b
l
e
u
p
o
n
re
q
u
e
s
t fo
r
th
is
d
e
v
i
c
e
BS250F
D
G
S
SOT23
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