DS21802 Rev. D-3 1 of 2 BS170
BS170
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
c183 High Input Impedance
c183 Fast Switching Speed
c183 CMOS Logic Compatible Input
c183 No Thermal Runaway or Secondary
Breakdown
c183 Case: TO-92, Plastic
c183 Leads: Solderable per MIL-STD-202,
Method 208
c183 Pin Connection: See Diagram
c183 Weight: 0.18 grams (approx.)
Mechanical Data
Features
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage VDGS 60 V
Gate-Source-Voltage (pulsed) VGS ±20 V
Drain Current (continuous) ID 300 mA
Power Dissipation @T
C
= 25°C (Note 1) P
d 830 mW
Junction Temperature Tj 150 °C
Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C
Characteristic Symbol Value Unit
Maximum Forward Current (continuous) IF 0.50 A
Forward Voltage Drop (typ.) @ V
GS
= 0, I
F
= 0.5A, T
j
= 25°C V
F 0.85 V
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
D
SGD
HH
BOTTOM
VIEW
E A
B
C
G
TO-92
Dim Min Max
A 4.45 4.70
B 4.46 4.70
C 12.7 —
D 0.41 0.63
E 3.43 3.68
G 2.42 2.67
H 1.14 1.40
All Dimensions in mm
Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage V(BR)DSS 60 90 — V ID = 100µA, VGS = 0
Gate Threshold Voltage VGS(th) 0.8 1.0 3.0 V VGS =VDS, ID = 1.0mA
Gate-Body Leakage Current IGSS — — 10 nA VGS = 15V, VDS = 0
Drain-Cutoff Current IDSS — — 0.5 µA VDS = 25V, VGS = 0
Drain-Source ON Resistance rDS (ON) — 3.5 5.0 W VGS = 10V, ID = 0.2mA
Thermal Resistance, Junction to Ambient Air Rc113JA — — 150 K/W Note 1
Forward Transconductance gFS — 200 — mm VDS = 10V, ID = 0.2A, f = 1MHz
Input Capacitance Ciss —60—pFVDS = 10V, VGS = 0, f =1.0MHz
Turn On Time
Turn Off Time
t
on
t
off
—
5.0
15
—ns
V
GS
= 10V, V
DS
= 10V,
R
D
= 100W
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified