BS170
器件描述:SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
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器件资料摘要:
Semiconductor Group 1 12/05/1997
BS 170
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1 Pin 2 Pin 3
S G D
Type V
DS
I
D
R
DS(on)
Package Marking
BS 170 60 V 0.3 A 5 Ω TO-92 BS 170
Type Ordering Code Tape and Reel Information
BS 170 Q67000-S076 E6288
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
60 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
60
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 25 °C
I
D
0.3
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
1.2
Power dissipation
T
A
= 25 °C
P
tot
0.63
W