1Motorola Small–Signal Transistors, FETs and Diodes Device Data

C0084C0077C0079C0083 C0083C0119C0105C0116C0099C0104C0105C0110C0103
N–Channel — Enhancement
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DS
200 Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
±20
±30
Vdc
Vpk
Drain Current
Continuous
(1)
Pulsed
(2)
I
D
I
DM
250
500
mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350 mW
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero–Gate–Voltage Drain Current (V
DS
= 130 Vdc, V
GS
= 0) I
DSS
— — 30 nAdc
Drain–Source Breakdown Voltage (V
GS
= 0, I
D
= 100 µAdc) V
(BR)DSX
200 — — Vdc
Gate Reverse Current (V
GS
= 15 Vdc, V
DS
= 0) I
GSS
— 0.01 10 nAdc
ON CHARACTERISTICS
(2)
Gate Threshold Voltage (I
D
= 1.0 mAdc, V
DS
= V
GS
) V
GS(Th)
1.0 — 3.0 Vdc
Static Drain–Source On Resistance
BS107 (V
GS
= 2.6 Vdc, I
D
= 20 mAdc)
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
BS107A (V
GS
= 10 Vdc)
(I
D
= 100 mAdc)
(I
D
= 250 mAdc)
r
DS(on)
—
—
—
—
—
—
4.5
4.8
28
14
6.0
6.4
Ohms
SMALL–SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
— 60 — pF
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
— 6.0 — pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
— 30 — pF
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 250 mAdc)
g
fs
200 400 — mmhos
SWITCHING CHARACTERISTICS
Turn–On Time t
on
— 6.0 15 ns
Turn–Off Time t
off
— 12 15 ns
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width C0118 300 µs, Duty Cycle C0118 2.0%.
Order this document
by BS107/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0083C0049C0048C0055
C0066C0083C0049C0048C0055C0065
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1997
1 DRAIN
3 SOURCE
2
GATE

REV 1