DA21804 Rev. C-3 1 of 2 BS107
BS107
N–CHANNEL ENHANCEMENT MODE TRANSISTOR
Features
c183 Case: TO-92 Plastic
c183 Leads: Solderable per
MIL-STD-202, Method 208
c183 Pin Connections: See Diagram
c183 Weight: 0.18 grams (approx.)
Mechanical Data
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
2. Pulse Test: Pulse width = 80µs, duty factor = 1%.
Characteristic Symbol Value Unit
Drain-Source-Voltage VDSS 200 V
Drain-Gate-Voltage VDGS 200 V
Gate-Source-Voltage (pulsed) (Note 2) VGS ±20 V
Drain-Current (continuous) ID 120 mA
Power Dissipation @T
C
= 25°C (Note 1) P
d 830 mW
Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C
c183 High Breakdown Voltage
c183 High Input Impedance
c183 Fast Switching Speed
c183 Specially Suited for Telephone Subsets
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Maximum Forward Current (continuous) IF 0.5 A
Forward Voltage Drop (typical)
@V
GS
= 0, I
F
= 0.5A, T
j
= 25°C
V
F 0.85 V
D
SGD
HH
BOTTOM
VIEW
E A
B
C
G
TO-92
Dim Min Max
A 4.45 4.70
B 4.46 4.70
C 12.7 —
D 0.41 0.63
E 3.43 3.68
G 2.42 2.67
H 1.14 1.40
All Dimensions in mm
Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage
V
(BR)DSS 200 230 — V
I
D
= 100µA, V
GS
= 0
Gate-Body Leakage Current
I
GSS — — 10 nA
V
GS
= 15V, V
DS
= 0
Drain-Cutoff Current
I
DSS
I
DSX
——
30
1.0
nA
µA
V
DS
=130V, V
GS
= 0
V
DS
= 70V, V
GS
= 0.2V
Gate-Source Threshold Voltage
V
GS(th) — 1.8 3 V
V
GS
=V
DS
, I
D
= 1.0mA
Drain-Source ON Resistance
r
DS(ON) —1828c87
V
GS
= 2.8V, I
D
= 20 mA
Thermal Resistance, Junction to Ambient Air Rc113JA — — 150 K/W (Note 1)
Input Capacitance
Output Capacitance
Feedback Capacitance
C
iss
C
oss
C
rss
—
58
8.0
1.5
—pFVDS = 20V, VGS = 0,f =1.0MHz
Turn On Time
Turn Off Time
t
on
t
off
—
5.0
15
—ns
V
GS
= 10V, V
DS
= 10V,
R
D
= 100c87
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified