BRY55
器件描述：SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS
器件厂商：MOTOROLA [Motorola, Inc]
文件大小：88.32KB，共4页
Sponsor by e络盟器件资料摘要：
1
Motorola Thyristor Device Data
C0083C0105C0108C0105C0099C0111C0110 C0067C0111C0110C0116C0114C0111C0108C0108C0101C0100 C0082C0101C0099C0116C0105C0102C0105C0101C0114C0115
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92)
package which is readily adaptable for use in automatic insertion equipment.
• Sensitive Gate Trigger Current — 200 µA Maximum
• Low Reverse and Forward Blocking Current — 100 µA Maximum, T
C
= 125°C
• Low Holding Current — 5 mA Maximum
• Glass-Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage
(1)
(R
GK
= 1000 Ω, T
J
= 25 to 125°C)
Marking: BRY55-1 . . . BRY55-30
-2 . . . BRY55-60
-3 . . . BRY55-100
-4 . . . BRY55-200
-6 . . . BRY55-400
-7 . . . BRY55-500
-8 . . . BRY55-600
V
RRM
, V
DRM
30
60
100
200
400
500
600
Volts
Forward Current RMS (All Conduction Angles) I
T(RMS)
0.8 Amp
Peak Forward Surge Current, T
A
= 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
I
TSM
8 Amps
Circuit Fusing Considerations, T
A
= 25°C
(t = 8.3 ms)
I
2
t 0.15 A
2
s
Peak Gate Power — Forward, T
A
= 25°C P
GM
0.1 Watt
Peak Gate Current Forward, T
A
= 25°C
(300 µs, 120 PPS)
I
GFM
1 Amp
Peak Gate Voltage — Reverse V
GRM
5 Volts
Operating Junction Temperature Range @ Rated V
RRM
and V
DRM
T
J
–40 to +125 °C
Storage Temperature Range T
stg
–40 to +150 °C
Lead Solder Temperature (C01161.5 mm from case, 10 s max.) +230 °C
*European part numbers only. Package is Case 29 with Leadform 18.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by BRY55-30/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
C0066C0082C0089C0053C0053C0045C0051C0048
C0116C0104C0114C0117 C0054C0048C0048
CASE 29-04
(TO-226AA)
STYLE 3
WITH TO-18 LEADFORM*
SCRs
0.8 AMPERE RMS
30 TO 600 VOLTS
C0042
C0042
Motorola Thyristor Device Data
C0083C0105C0108C0105C0099C0111C0110 C0067C0111C0110C0116C0114C0111C0108C0108C0101C0100 C0082C0101C0099C0116C0105C0102C0105C0101C0114C0115
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92)
package which is readily adaptable for use in automatic insertion equipment.
• Sensitive Gate Trigger Current — 200 µA Maximum
• Low Reverse and Forward Blocking Current — 100 µA Maximum, T
C
= 125°C
• Low Holding Current — 5 mA Maximum
• Glass-Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage
(1)
(R
GK
= 1000 Ω, T
J
= 25 to 125°C)
Marking: BRY55-1 . . . BRY55-30
-2 . . . BRY55-60
-3 . . . BRY55-100
-4 . . . BRY55-200
-6 . . . BRY55-400
-7 . . . BRY55-500
-8 . . . BRY55-600
V
RRM
, V
DRM
30
60
100
200
400
500
600
Volts
Forward Current RMS (All Conduction Angles) I
T(RMS)
0.8 Amp
Peak Forward Surge Current, T
A
= 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
I
TSM
8 Amps
Circuit Fusing Considerations, T
A
= 25°C
(t = 8.3 ms)
I
2
t 0.15 A
2
s
Peak Gate Power — Forward, T
A
= 25°C P
GM
0.1 Watt
Peak Gate Current Forward, T
A
= 25°C
(300 µs, 120 PPS)
I
GFM
1 Amp
Peak Gate Voltage — Reverse V
GRM
5 Volts
Operating Junction Temperature Range @ Rated V
RRM
and V
DRM
T
J
–40 to +125 °C
Storage Temperature Range T
stg
–40 to +150 °C
Lead Solder Temperature (C01161.5 mm from case, 10 s max.) +230 °C
*European part numbers only. Package is Case 29 with Leadform 18.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by BRY55-30/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
C0066C0082C0089C0053C0053C0045C0051C0048
C0116C0104C0114C0117 C0054C0048C0048
CASE 29-04
(TO-226AA)
STYLE 3
WITH TO-18 LEADFORM*
SCRs
0.8 AMPERE RMS
30 TO 600 VOLTS
C0042
C0042