Philips Semiconductors Product specification
Breakover diodes BRS212 series

GENERAL DESCRIPTION QUICK REFERENCE DATA
A range of bidirectional, breakover SYMBOL PARAMETER MIN. TYP. MAX. UNIT
diodes in a two terminal, surface
mounting, plastic envelope. These V
(BO)
Breakover voltage
devices feature controlled breakover BRS212-140 - 140 - V
voltage and high holding current BRS212-160 - 160 - V
together with high peak current BRS212-180 - 180 - V
handling capability. Their intended BRS212-200 - 200 - V
application is protection of line based BRS212-220 - 220 - V
telecommunications equipment BRS212-240 - 240 - V
against voltage transients. BRS212-260 - 260 - V
BRS212-280 - 280 - V
I
H
Holding current 150 - - mA
I
PP
Non-repetitive peak pulse - - 40 A
current (CCITT K17)
OUTLINE - SOD106 SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
D
Continuous voltage BRS212-140 - 105 V
BRS212-160 - 120 V
BRS212-180 - 135 V
BRS212-200 - 150 V
BRS212-220 - 165 V
BRS212-240 - 180 V
BRS212-260 - 195 V
BRS212-280 - 210 V
I
PP
Non-repetitive peak pulse 5/310 µs impulse equivalent to - 40 A
current 10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
I
TSM
Non repetitive surge peak half sine wave; t = 10 ms; - 15 A
on-state current T
j
= 70 ˚C prior to surge
I
2
tI
2
t for fusing t
p
= 10 ms - 1.1 A
2
s
dI
T
/dt Rate of rise of on-state current t
p
= 10 µs - 50 A/µs
after V
(BO)
turn-on
P
tot
Continuous dissipation on T
sp
= 50˚C - 4 W
infinite heatsink
P
TM
Peak dissipation t
p
= 1 ms; T
a
= 25˚C - 50 W
T
stg
Storage temperature - 40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
T
L
Maximum terminal temperature soldering time = 10 s - 260 ˚C
for soldering
YM
212
XXX
XXX denotes voltage grade
date code
PH
January 1997 1 Rev 1.000