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Memory ICs
4,096-Bit Serial Electrically Erasable PROM
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
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Features
• Low power CMOS Technology
• 256 · 16 bit configuration
• 2.7V to 5.5V operation
• Low power dissipation
– 3mA (max.) active current: 5V
– 5m A (max.) standby current: 5V
• Auto increment for efficient data bump
• Automatic erase-before-write
• Hardware and software write protection
– Default to write-disable state at power up
– Software instructions for write-enable / disable
– Vcc lockout inadvertent write protection
• 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages
• Device status signal during write cycle
• TTL compatible Input / Output
• 100,000 ERASE / write cycles
• 10 years Data Retention
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Pin assignments
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Pin descriptions
1
2
3
4
8
7
6
5
CS
SK
DI
DO
VCC
N.C.
N.C.
GND
BR93LC66 /
BR93LC66RF
1
2
3
4
8
7
6
5
NC
VCC
CS
SK
N.C.
GND
DO
DI
BR93LC66F /
BR93LC66FV
CS
SK
DI
DO
GND
N.C.
N.C.
VCC
Function
Chip select input
Serial clock input
Start bit, operating code, address, and serial
data input
Serial data output, READY / BUSY internal
status display output
Ground
Not connected
Not connected
Power supply
Pin
Name
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Overview
The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed
electrically. Each is configured of 256 words · 16 bits (4096 bits), and each word can be accessed individually and
data read from it and written to it.
Operation control is performed using five types of commands. The commands, addresses, and data are input
through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or
BUSY) can be output from the DO pin.