BR34L02FV-W
Memory ICs
Rev.A 1/24
256×8 bit Electrically Erasable PROM
(based on Serial Presence Detect)
BR34L02FV-W


The BR34L02FV-W is a 2k bit EEPROM memory with write-protect function having independent rewrite inhibit area,
developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is
a memory IC that reads ID in order for the Plug & Play feature to operate.

∗ I
2
C BUS is a registered trademark of Philips.

z Applications
General purpose


z Features
1) 256k registers × 8 bits serial architecture
2) Single power supply (1.8V to 5.5V)
3) Two wire serial interface
4) Page Write Function (16byte)
5) Write Protect Mode
Write protect 1 (Onetime Rom) : 00h to 7Fh
Write protect 2 (Hardwire WP PIN) : 00h to FFh
6) Low Power consumption
Write (5V) : 1.2mA (Typ.)
Read (5V) : 0.2mA (Typ.)
Standby (5V) : 0.1µA (Typ.)
7) DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
8) Small package - - - - - - SSOP-B8 pin
9) High reliability fine pattern CMOS technology
10) Endurance : 1,000,000 erase/write cycles
11) Data retention : 40years
12) Filtered inputs in SCL•SDA for noise suppression
13) Initial data FFh in all address


zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Supply voltage −0.3 to +6.5 V
Power dissipation mW
Storage temperature −65 to +125 °C
Operating temperature °C
Terminal voltage − V
−40 to +85
VCC
−0.3 to VCC+0.3
Pd
Tstg
Topr
∗1
300(SSOP-B8)
∗1 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.