BR24L08-W / BR24L08F-W / BR24L08FJ-W
Memory ICs BR24L08FV-W / BR24L08FVM-W
1/25
1024×8 bit electrically erasable PROM
BR24L08-W / BR24L08F-W / BR24L08FJ-W /
BR24L08FV-W / BR24L08FVM-W


The BR24L08-W series is 2-wire (I
2
C BUS type) serial EEPROMs which are electrically programmable.

∗ I
2
C BUS is a registered trademark of Philips.
zApplications
General purpose

zFeatures
1) 1024 registers × 8 bits serial architecture.
2) Single power supply (1.8V to 5.5V).
3) Two wire serial interface.
4) Self-timed write cycle with automatic erase.
5) 16byte Page Write mode.
6) Low power consumption.
Write (5V) : 1.5mA (Typ.)
Read (5V) : 0.2mA (Typ.)
Standby (5V) : 0.1µA (Typ.)
7) DATA security
Write protect feature (WP pin).
Inhibit to WRITE at low VCC.
8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8
9) High reliability EEPROM with Double-Cell structure.
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCL•SDA for noise suppression.
14) Initial data FFh in all address.

zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Supply voltage −0.3 to +6.5 V
Power dissipation mW
Storage temperature −65 to +125 °C
Operating temperature °C
Terminal voltage − V
−40 to +85
VCC
−0.3 to VCC+0.3
Pd
Tstg
Topr
∗1
450(SOP-J8)
450(SOP8)
800(DIP8)
∗2
∗2
∗3
∗4
300(SSOP-B8)
∗1 Reduced by 8.0mW for each increase in Ta of 1°C over 25°C.
∗2 Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.
∗3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
∗4 Reduced by 3.1mW for each increase in Ta of 1°C over 25°C.
310(MSOP8)