Philips Semiconductors Preliminary specification
Breakover diodes BR211SM series

GENERAL DESCRIPTION QUICK REFERENCE DATA
A range of bidirectional, breakover SYMBOL PARAMETER MIN. MAX. UNIT
diodes in a two terminal, surface
mounting, plastic envelope. These BR211SM-140 to BR211SM-280
devices feature controlled breakover V
(BO)
Breakover voltage 140 280 V
voltage and high holding current I
H
Holding current 150 - mA
together with high peak current I
TSM
Non-repetitive peak current - 40 A
handling capability. Typical
application is transient overvoltage
protection in telecommunications
equipment.
OUTLINE - SOD106 SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
D
Continuous voltage - 75% of V
V
(BO)typ
I
TSM1
Non repetitive peak current 10/320 µs impulse equivalent to - 40 A
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
I
TSM2
Non repetitive on-state current half sine wave; t = 10 ms; - 15 A
T
j
= 70 ˚C prior to surge
I
2
tI
2
t for fusing t
p
= 10 ms - 1.1 A
2
s
dI
T
/dt Rate of rise of on-state current t
p
= 10 µs - 50 A/µs
after V
(BO)
turn-on
P
tot
Continuous dissipation T
a
= 25˚C - 1.2 W
P
TM
Peak dissipation t
p
= 1 ms; T
a
= 25˚C - 50 W
T
stg
Storage temperature - 40 150 ˚C
T
a
Operating ambient temperature off-state - 70 ˚C
T
vj
Overload junction temperature on-state - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
Thermal resistance junction to - - 12 K/W
solder point
R
th j-a
Thermal resistance junction to pcb mounted; minimum footprint - 100 - K/W
ambient
Z
th j-a
Thermal impedance junction to t
p
= 1 ms - 2.62 - K/W
ambient
August 1996 1 Rev 1.100