BR1005
器件描述:TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
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器件资料摘要:
FEATURES
* Surge overload rating: 200 Amperes peak
* Low forward voltage drop
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BR1005
THRU
BR1010
BR-8/10
Dimensions in inches and (millimeters)
Maximum Average Forward Rectified Output Current at
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
SYMBOL
VRRM
VDC
IO
IFSM
VRMS Volts
Volts
Volts
Amps
200
Amps
UNITS
50 100 200 400 600 800 1000
7035 140 280 420 700
560
50 200 400 600 800 1000100
BR1005 BR101 BR102 BR104 BR106 BR108 BR1010
10
DC Blocking Voltage per element
VF
IR
1.1
500
uAmps
Maximum DC Reverse Current at Rated
Maximum Forward Voltage Drop per element at 5.0A DC Volts
@TA = 25
o
C
@TC = 100
o
C
10
Operating Temperature Range
TSTG -55 to + 150
0
C
TJ -55 to + 125
0
C
Storage Temperature Range
VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 10 Amperes
RECTIFIER SPECIALISTS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: MIL-STD-202, Method 208 guaranteed
* Polarity: Symbols molded or marked on body
* Mounting position: Any
* Weight: 6.9 grams
Tc = 50
o
C
I
2
t Rating for Fusing (t<8.3ms) I
2
t 166 A
2
Sec
Typical Junction Capacitance ( Note1) CJ 200 pF
Typical Thermal Resistance (Note 2) RθJA 21
0
C/W
NOTES : 1.Measured at 1 MHZ and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads.
240