BPW85
Vishay Telefunken
1 (6)Rev. 3, 16-Nov-99
www.vishay.de • FaxBack +1-408-970-5600Document Number 81531
Silicon NPN Phototransistor
Description
BPW85 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1 (ø 3
mm) plastic package. Due to its waterclear epoxy the
device is sensitive to visible and near infrared radi-
ation.
The viewing angle of ± 25C0176 makes it insensible to ambi-
ent straylight.
Features
C0068 Fast response times
C0068 High photo sensitivity
C0068 Standard T–1 (ø 3 mm ) clear plastic package
C0068 Axial terminals
C0068 Angle of half sensitivity ϕ = ± 25C0176
C0068 Suitable for visible and near infrared radiation
C0068 Selected into sensitivity groups
94 8396
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
CEO
70 V
Emitter Collector Voltage V
ECO
5 V
Collector Current I
C
50 mA
Peak Collector Current t
p
/T = 0.5, t
p
C0120 10 ms I
CM
100 mA
Total Power Dissipation T
amb
C0120 55 C0176C P
tot
100 mW
Junction Temperature T
j
100 C0176C
Storage Temperature Range T
stg
–55...+100 C0176C
Soldering Temperature t C0120 3 s, 2 mm from case T
sd
260 C0176C
Thermal Resistance Junction/Ambient R
thJA
450 K/W