BPW77N
Vishay Telefunken
1 (6)Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600Document Number 81527
Silicon NPN Phototransistor
Description
BPW77N is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard TO–18 hermeti-
cally sealed metal case.
Its glass lens featuring a viewing angle of ±10C0176 makes
it insensible to ambient straylight.
A base terminal is available to enable biasing and sen-
sitivity control.
Features
C0068 Hermetically sealed case
C0068 Lens window
C0068 Narrow viewing angle ϕ = ± 10C0176
C0068 Exact central chip alignment
C0068 Base terminal available
C0068 High photo sensitivity
C0068 Suitable for visible and near infrared radiation
C0068 Selected into sensitivity groups
94 8486
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
CBO
80 V
Collector Emitter Voltage V
CEO
70 V
Emitter Base Voltage V
EBO
5 V
Collector Current I
C
50 mA
Peak Collector Current t
p
/T = 0.5, t
p
C0120 10 ms I
CM
100 mA
Total Power Dissipation T
amb
C0120 25 C0176C P
tot
250 mW
Junction Temperature T
j
125 C0176C
Storage Temperature Range T
stg
–55...+125 C0176C
Soldering Temperature t C0120 5 s T
sd
260 C0176C
Thermal Resistance Junction/Ambient R
thJA
400 K/W
Thermal Resistance Junction/Case R
thJC
150 K/W