BPW17N
Vishay Telefunken
1 (5)Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600Document Number 81516
Silicon NPN Phototransistor
Description
BPW17N is a silicon NPN epitaxial planar photo-
transistor in a miniature plastic case with a ± 12C0176 lens.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stack-
able on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
Features
C0068 Miniature T–C0190 clear plastic package with lens
C0068 Narrow viewing angle ϕ = ± 12C0176
C0068 Insensitive against background light due to nar-
row aperture
C0068 Suitable for 0.1” (2.54 mm) center to center spac-
ing
C0068 Suitable for visible and near infrared radiation
C0068 Compatible with IR diode CQY37N
94 8639
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
CEO
32 V
Emitter Collector Voltage V
ECO
5 V
Collector Current I
C
50 mA
Peak Collector Current t
p
/T = 0.5, t
p
C0120 10 ms I
CM
100 mA
Total Power Dissipation T
amb
C0120 55 C0176C P
tot
100 mW
Junction Temperature T
j
100 C0176C
Storage Temperature Range T
stg
–55...+100 C0176C
Soldering Temperature t C0120 3 s T
sd
260 C0176C
Thermal Resistance Junction/Ambient R
thJA
450 K/W