BPW14N
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
1 (6)
Silicon NPN Phototransistor
Description
BPW14N is a high speed silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically sealed
metal case.
Its glass lens, featuring a viewing angle of ±12C0176 makes it
insensible to ambient straylight. A base terminal is avail-
able to enable biasing and sensitivity control.
Features
C0068 Hermetically sealed case
C0068 Lens window
C0068 Narrow viewing angle ϕ = ± 10C0176
C0068 Exact central chip alignment
C0068 Base terminal available
C0068 High photo sensitivity
C0068 Fast response times
C0068 Suitable for visible and near infrared radiation
C0068 Selected into sensitivity groups
94 8486
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
CBO
32 V
Collector Emitter Voltage V
CEO
32 V
Emitter Base Voltage V
EBO
5 V
Collector Current I
C
50 mA
Peak Collector Current t
p
/T = 0.5, t
p
C0120 10 ms I
CM
100 mA
Total Power Dissipation T
amb
C0120 25 C0176C P
tot
310 mW
Junction Temperature T
j
150 C0176C
Storage Temperature Range T
stg
–55...+150 C0176C
Soldering Temperature t C0120 5 s T
sd
260 C0176C
Thermal Resistance Junction/Ambient R
thJA
400 K/W
Thermal Resistance Junction/Case R
thJC
150 K/W